Gary Moss AIA, LEED AP
Principal / Science & Technology
Gary Moss came to Page with a solid design portfolio of high-tech manufacturing facilities. His first project with the firm put his expertise to the test. Gary was assigned as the on-site design representative during the construction of Micron Fab 4 in Boise, Idaho. As his introduction to Page’s culture, he learned quickly about the firm’s interdisciplinary approach to project delivery.
“The project was a collaborative design-build effort that involved ‘on the fly’ decisions made in the field with critical schedule dates dictated by the delivery and installation of multimillion dollar production equipment,” Gary says. “This was my first project with Page and it gave me the opportunity to learn how the firm actually worked on fast-track projects.”
Creativity and commitment, he soon realized, were essential traits shared among the team members. Yet there was another aspect that was most important.
“Collaboration is the key ingredient to creating a team approach,” he says. “In the project environment there should always be constant communication from all disciplines during the entire schedule. Everybody should have a defendable reason for his or her approach and the opportunity to express that to the entire team. When all members of the team understand each other’s approach then you have the entire team working on the final solution.”
A registered architect in New Mexico, Gary has led successful projects across the Southwest for such companies as Intel (Albuquerque, Phoenix, Colorado Springs), Sandia National Laboratories (Albuquerque), Goodrich Aerospace (Albuquerque), Sumco (Albuquerque), Advanced Micro Devices (Austin) and Texas Instruments (Dallas). Gary’s prolific career in designing semiconductor plants followed as a logical result of his academic pursuits at Texas Tech University where he was a double major, with a Bachelor’s degree in architecture and a Bachelor of Science in civil engineering.
Among his projects with Page was a 26,000-square-foot retrofit for Intel in Rio Rancho, New Mexico of an existing Class 100 submicron cleanroom support area into a Class 1 and Class 100 cleanroom production area. The project included a highly detailed programming and schematic design phase that was used to develop a comprehensive construction estimate.
Prior to coming to Page, Gary was involved with multiple projects for Intel starting with the first expansion of Fab 9 (EP1)( 1993) and through the fit up of Fab11X (2000). He was also involved with the Sandia National Laboratories Microsystems Engineering Sciences Application Facility in Albuquerque, New Mexico, as the design project manager for a Conceptual Design Plan (CDP) and Conceptual Design Report (CDR). Responsibilities included working with user groups to define the facility requirements and to document those requirements first in a CDP (used to secure Department of Energy funding for the CDR) and then in a CDR (used to secure funding from Congress).